BICMOS INVERTER PULLUP CIRCUIT VDD 1 0 5.0V VSS 2 0 0.0V VIN 3 0 0.75V VC 1 11 0.0V VB 5 15 0.0V Q1 11 15 4 M_NPN AREA=4 M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U CL 4 0 5.0PF .IC V(4)=0.75V V(5)=0.0V .MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16 + UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U + LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5 + CJSW=0.3N MJSW=0.5 LEVEL=2 .MODEL M_NPN NBJT LEVEL=2 + TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET + $ 1.0 UM EMITTER. + OPTIONS DEFW=2.0U + OUTPUT STATISTICS + + X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0 + X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0 + + Y.MESH L=-0.2 N=1 + Y.MESH L= 0.0 N=5 + Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5 + Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5 + Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5 + + DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0 + DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0 + DOMAIN NUM=3 MATERIAL=3 Y.L=0.0 + MATERIAL NUM=1 POLYSILICON + MATERIAL NUM=2 OXIDE + MATERIAL NUM=3 SILICON + + ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3 + ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0 + ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2 + + DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0 + + CHAR.L=0.047 LAT.ROTATE + DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0 + + CHAR.L=0.100 LAT.ROTATE + DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0 + + CHAR.L=0.100 LAT.ROTATE RATIO=0.7 + DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3 + DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3 + + CHAR.L=0.100 LAT.ROTATE + + METHOD AC=DIRECT ITLIM=10 + MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB .TRAN 0.5NS 4.0NS .PRINT TRAN V(3) V(4) .OPTION ACCT BYPASS=1 .END
