********************************************************************** * EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999 * ---------------------------------- * * ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set * for the EKV v2.6 model is provided for NMOS and PMOS. * * * IMPORTANT NOTES: * ---------------- * * Parameters do not correspond to a particular technology but * have reasonable values for standard 0.5um CMOS. * Not intended for use in real design. * * Includes all intrinsic model parameters. An example set for * extrinsic model parameters is provided. * * Geometry range: W >= 0.8um, L >= 0.5um * Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V * * For use with either simulator, comment/uncomment respective lines. * Use of extrinsic model parameters and models (series resistance, * junction currents/capacitances) is in general simulator-dependent. * ********************************************************************** * EKV v2.6 NMOS *--------------- .MODEL NCH NMOS + LEVEL = 44 *** Setup Parameters *+ UPDATE = 2.6 *+ XQC = 0.4 *** Process Related Model Parameters + COX = 3.45E-3 + XJ = 0.15E-6 *** Intrinsic Model Parameters + VTO = 0.6 + GAMMA = 0.71 + PHI = 0.97 + KP = 150E-6 + E0 = 88.0E6 + UCRIT = 4.5E6 + DL = -0.05E-6 + DW = -0.02E-6 + LAMBDA = 0.23 + LETA = 0.28 + WETA = 0.05 + Q0 = 280E-6 + LK = 0.5E-6 *** Substrate Current Parameters + IBN = 1.0 + IBA = 200E6 + IBB = 350E6 *** Intrinsic Model Temperature Parameters + TNOM = 25.0 + TCV = 1.5E-3 + BEX = -1.5 + UCEX = 1.7 + IBBT = 0.0 *** 1/f Noise Model Parameters + KF = 1E-27 + AF = 1 *** Short-Distance Matching Statistical Parameters (for MC simulation only) *+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 *+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 *+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 *** Series Resistance and Area Calulation Parameters *+ RLEV = 3 + HDIF = 0.9E-6 + RSH = 510 *** Junction Current Parameters *+ ALEV = 3 + JS = 8.0E-6 + JSW = 1.5E-10 + XTI = 0 + N = 1.5 *** Junction Capacitances Parameters + CJ = 8.0E-4 + CJSW = 3.0E-10 + MJ = 0.5 + MJSW = 0.3 + PB = 0.9 + PBSW = 0.5 + FC = 0.5 *** Gate Overlap Capacitances + CGSO = 1.5E-10 + CGDO = 1.5E-10 + CGBO = 4.0E-10 * EKV v2.6 PMOS *--------------- .MODEL PCH PMOS + LEVEL = 44 *** Setup Parameters *+ UPDATE = 2.6 *+ XQC = 0.4 *** Process Related Model Parameters + COX = 3.45E-3 + XJ = 0.15E-6 *** Intrinsic Model Parameters + VTO = -0.55 + GAMMA = 0.69 + PHI = 0.87 + KP = 35.0E-6 + E0 = 51.0E6 + UCRIT = 18.0E6 + DL = -0.05E-6 + DW = -0.03E-6 + LAMBDA = 1.1 + LETA = 0.45 + WETA = 0.0 + Q0 = 200E-6 + LK = 0.6E-6 *** Substrate Current Parameters + IBN = 1.0 + IBA = 10E6 + IBB = 300E6 *** Intrinsic Model Temperature Parameters + TNOM = 25.0 + TCV = -1.4E-3 + BEX = -1.4 + UCEX = 2.0 + IBBT = 0.0 *** 1/f Noise Model Parameters + KF = 1.0E-28 + AF = 1 *** Short-Distance Matching Statistical Parameters (for MC simulation only) *+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 *+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 *+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 *** Series Resistance and Area Calulation Parameters *+ RLEV = 3 + HDIF = 0.9E-6 + RSH = 990 *** Junction Current Parameters *+ ALEV = 3 + JS = 4.0E-5 + JSW = 7.0E-10 + XTI = 0 + N = 1.8 *** Junction Capacitances Parameters + CJ = 8.0E-4 + CJSW = 4.0E-10 + MJ = 0.5 + MJSW = 0.35 + PB = 0.9 + PBSW = 0.8 + FC = 0.5 *** Gate Overlap Capacitances + CGSO = 1.5E-10 + CGDO = 1.5E-10 + CGBO = 4.0E-10
