** * Numerical models for a * polysilicon emitter complementary bipolar process. * The default device size is 1um by 10um (LxW) ** .model M_NPN nbjt level=1 + title One-Dimensional Numerical Bipolar + options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p + x.mesh loc=-0.2 n=1 + x.mesh loc=0.0 n=51 + x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 + x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 + domain num=1 material=1 x.l=0.0 + domain num=2 material=2 x.h=0.0 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + material num=2 polysilicon + mobility mat=2 concmod=ct fieldmod=ct + doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 + doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 + doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 + doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + models bgn srh auger conctau concmob fieldmob ^aval + method devtol=1e-12 ac=direct itlim=15 .model M_NPSUB numd level=1 + title One-Dimensional Numerical Collector-Substrate Diode + options defa=10p + x.mesh loc=1.3 n=1 + x.mesh loc=2.0 n=101 + domain num=1 material=1 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 + models bgn srh auger conctau concmob fieldmob ^aval + method devtol=1e-12 itlim=10 .model M_PNP nbjt level=1 + title One-Dimensional Numerical Bipolar + options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p + x.mesh loc=-0.2 n=1 + x.mesh loc=0.0 n=51 + x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 + x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 + domain num=1 material=1 x.l=0.0 + domain num=2 material=2 x.h=0.0 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + material num=2 polysilicon + mobility mat=2 concmod=ct fieldmod=ct + doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 + doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 + doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + models bgn srh auger conctau concmob fieldmob ^aval + method devtol=1e-12 ac=direct itlim=15 .model M_PNSUB numd level=1 + title One-Dimensional Numerical Collector-Substrate Diode + options defa=10p + x.mesh loc=1.3 n=1 + x.mesh loc=2.0 n=101 + domain num=1 material=1 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + doping unif n.type conc=1e15 x.l=0.0 x.h=2.0 + models bgn srh auger conctau concmob fieldmob ^aval + method devtol=1e-12 itlim=10
