MOS charge pump vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns vbb 0 7 dc 0v pulse 0 5 0ns 5ns 5ns 50ns 100ns rd 6 2 10k m1 5 4 3 7 mmod w=100um vs 3 2 0 vc 2 1 0 c2 1 0 10pf .ic v(3)=1.0 .tran 2ns 200ns .options acct bypass=1 .print tran v(1) v(2) .model mmod numos + x.mesh n=1 l=0 + x.mesh n=3 l=0.4 + x.mesh n=7 l=0.6 + x.mesh n=15 l=1.4 + x.mesh n=19 l=1.6 + x.mesh n=21 l=2.0 + + y.mesh n=1 l=0 + y.mesh n=4 l=0.015 + y.mesh n=8 l=0.05 + y.mesh n=12 l=0.25 + y.mesh n=14 l=0.35 + y.mesh n=17 l=0.5 + y.mesh n=21 l=1.0 + + region num=1 material=1 y.l=0.015 + material num=1 silicon + mobility material=1 concmod=sg fieldmod=sg + mobility material=1 elec major + mobility material=1 elec minor + mobility material=1 hole major + mobility material=1 hole minor + + region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5 + material num=2 oxide + + elec num=1 ix.l=18 ix.h=21 iy.l=4 iy.h=4 + elec num=2 ix.l=5 ix.h=17 iy.l=1 iy.h=1 + elec num=3 ix.l=1 ix.h=4 iy.l=4 iy.h=4 + elec num=4 ix.l=1 ix.h=21 iy.l=21 iy.h=21 + + doping unif n.type conc=1e18 x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25 + doping unif n.type conc=1e18 x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25 + doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0 + doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05 + + models concmob fieldmob + method onec .end
