** * BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process * Contains CIDER input descriptions as well as matching * SPICE models for some of the CIDER models. ** ** * One-dimensional models for a * polysilicon emitter complementary bipolar process. * The default device size is 1um by 1um (LxW) ** .model M_NPN1D nbjt level=1 + title One-Dimensional Numerical Bipolar + options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p + x.mesh loc=-0.2 n=1 + x.mesh loc=0.0 n=51 + x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 + x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 + domain num=1 material=1 x.l=0.0 + domain num=2 material=2 x.h=0.0 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + material num=2 polysilicon + mobility mat=2 concmod=ct fieldmod=ct + doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 + doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 + doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 + doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + models bgn srh auger conctau concmob fieldmob + method devtol=1e-12 ac=direct itlim=15 .model M_PNP1D nbjt level=1 + title One-Dimensional Numerical Bipolar + options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p + x.mesh loc=-0.2 n=1 + x.mesh loc=0.0 n=51 + x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 + x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 + domain num=1 material=1 x.l=0.0 + domain num=2 material=2 x.h=0.0 + material num=1 silicon + mobility mat=1 concmod=ct fieldmod=ct + material num=2 polysilicon + mobility mat=2 concmod=ct fieldmod=ct + doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 + doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 + doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 + models bgn srh auger conctau concmob fieldmob + method devtol=1e-12 ac=direct itlim=15 ** * Two-dimensional models for a * polysilicon emitter complementary bipolar process. * The default device size is 1um by 1um (LxW) ** .MODEL M_NPNS nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since half the device is simulated, double the unit width to get + * 1.0 um emitter. Use a small mesh for this model. + options defw=2.0u + output stat + + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 + x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 + y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 + y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate + doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate ratio=0.7 + doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob .MODEL M_NPN nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since half the device is simulated, double the unit width to get + * 1.0 um emitter length. Uses a finer mesh in the X direction. + options defw=2.0u + output stat + + x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 + x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 + x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 + x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5 + y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5 + y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5 + y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 + y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate + doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate ratio=0.7 + doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob .MODEL M_PNPS nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since half the device is simulated, double the unit width to get + * 1.0 um emitter length. Use a small mesh for this model. + options defw=2.0u + output stat + + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 + x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5 + y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5 + y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.200 lat.rotate + doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate ratio=0.7 + doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob .MODEL M_PNP nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since half the device is simulated, double the unit width to get + * 1.0 um emitter length. Uses a finer mesh in the X direction. + options defw=2.0u + output stat + + x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 + x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 + x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 + x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5 + y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5 + y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5 + y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 + y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.200 lat.rotate + doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 + + char.l=0.100 lat.rotate ratio=0.7 + doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob ** * Two-dimensional models for a * complementary MOS process. * Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided. ** .MODEL M_NMOS_1 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_2 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 + x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_3 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 + x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_4 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 + x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_5 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 + x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_10 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 + x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_NMOS_50 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 + x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_1 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_2 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 + x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_3 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 + x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_4 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 + x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_5 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 + x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_10 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 + x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec .MODEL M_PMOS_50 numos + output stat + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 + x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec ** * BSIM1 NMOS and PMOS 1.0 \um models. * Gummel-Poon bipolar models. ** .model M_NSIM_1 nmos level=4 +vfb= -1.1908 +phi= .8399 +k1= 1.5329 +k2= 193.7322m +eta= 2m +muz= 746.0 +u0= 90.0m +x2mz= 10.1429 +x2e= -2.5m +x3e= 0.2m +x2u0= -10.0m +mus= 975.0 +u1= .20 +x2ms= 0.0 +x2u1= 0.0 +x3ms= 10 +x3u1= 5.0m +tox=2.00000e-02 +cgdo=2.0e-10 +cgso=2.0e-10 +cgbo=0.0 +temp= 27 +vdd= 7.0 +xpart +n0= 1.5686 +nb= 94.6392m +nd=0.00000e+00 +rsh=30.0 cj=7.000e-004 cjsw=4.20e-010 +js=1.00e-008 pb=0.700e000 +pbsw=0.8000e000 mj=0.5 mjsw=0.33 +wdf=0 dell=0.20u .model M_PSIM_1 pmos level=4 +vfb= -1.3674 +phi= .8414 +k1= 1.5686 +k2= 203m +eta= 2m +muz= 340.0 +u0= 35.0m +x2mz= 6.0 +x2e= 0.0 +x3e= -0.2m +x2u0= -15.0m +mus= 440.0 +u1= .38 +x2ms= 0.0 +x2u1= 0.0 +x3ms= -20 +x3u1= -10.0m +tox=2.00000e-02 +cgdo=2.0e-10 +cgso=2.0e-10 +cgbo=0.0 +temp= 27 +vdd= 5.0 +xpart +n0= 1.5686 +nb= 94.6392m +nd=0.00000e+00 +rsh=80.0 cj=7.000e-004 cjsw=4.20e-010 +js=1.00e-008 pb=0.700e000 +pbsw=0.8000e000 mj=0.5 mjsw=0.33 +wdf=0 dell=0.17u .model M_GNPN npn + is=1.3e-16 + nf=1.00 bf=262.5 ikf=25mA vaf=20v + nr=1.00 br=97.5 ikr=0.5mA var=1.8v + rc=20.0 + re=0.09 + rb=15.0 + ise=4.0e-16 ne=2.1 + isc=7.2e-17 nc=2.0 + tf=9.4ps itf=26uA xtf=0.5 + tr=10ns + cje=89.44fF vje=0.95 mje=0.5 + cjc=12.82fF vjc=0.73 mjc=0.49 .model M_GPNP pnp + is=5.8e-17 + nf=1.001 bf=96.4 ikf=12mA vaf=29v + nr=1.0 br=17.3 ikr=0.2mA var=2.0v + rc=50.0 + re=0.17 + rb=20.0 + ise=6.8e-17 ne=2.0 + isc=9.0e-17 nc=2.1 + tf=27.4ps itf=26uA xtf=0.5 + tr=10ns + cje=55.36fF vje=0.95 mje=0.58 + cjc=11.80fF vjc=0.72 mjc=0.46
