MOS CHARGE PUMP VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS VBB 0 7 DC 0V PULSE 0 5 0NS 5NS 5NS 50NS 100NS RD 6 2 10K M1 5 4 3 7 MMOD W=100UM VS 3 2 0 VC 2 1 0 C2 1 0 10PF .IC V(3)=1.0 .TRAN 2NS 200NS .OPTIONS ACCT BYPASS=1 .PRINT TRAN V(1) V(2) .MODEL MMOD NUMOS + X.MESH N=1 L=0 + X.MESH N=3 L=0.4 + X.MESH N=7 L=0.6 + X.MESH N=15 L=1.4 + X.MESH N=19 L=1.6 + X.MESH N=21 L=2.0 + + Y.MESH N=1 L=0 + Y.MESH N=4 L=0.015 + Y.MESH N=8 L=0.05 + Y.MESH N=12 L=0.25 + Y.MESH N=14 L=0.35 + Y.MESH N=17 L=0.5 + Y.MESH N=21 L=1.0 + + REGION NUM=1 MATERIAL=1 Y.L=0.015 + MATERIAL NUM=1 SILICON + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG + + REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5 + MATERIAL NUM=2 OXIDE + + ELEC NUM=1 IX.L=18 IX.H=21 IY.L=4 IY.H=4 + ELEC NUM=2 IX.L=5 IX.H=17 IY.L=1 IY.H=1 + ELEC NUM=3 IX.L=1 IX.H=4 IY.L=4 IY.H=4 + ELEC NUM=4 IX.L=1 IX.H=21 IY.L=21 IY.H=21 + + DOPING UNIF N.TYPE CONC=1E18 X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25 + DOPING UNIF N.TYPE CONC=1E18 X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25 + DOPING UNIF P.TYPE CONC=1E15 X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0 + DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05 + + MODELS CONCMOB FIELDMOB + METHOD ONEC .END
