TURNOFF TRANSIENT OF PASS TRANSISTOR M1 11 2 3 4 MMOD W=20UM CS 1 0 6.0PF CL 3 0 6.0PF R1 3 6 200K VIN 6 0 DC 0 VDRN 1 11 DC 0 VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0 VB 4 0 DC 0.0 .TRAN 0.05NS 0.2NS 0.0NS 0.05NS .PRINT TRAN V(1) I(VDRN) .IC V(1)=0 V(3)=0 .OPTION ACCT BYPASS=1 .MODEL MMOD NUMOS + X.MESH L=0.0 N=1 + X.MESH L=0.6 N=4 + X.MESH L=0.7 N=5 + X.MESH L=1.0 N=7 + X.MESH L=1.2 N=11 + X.MESH L=3.2 N=21 + X.MESH L=3.4 N=25 + X.MESH L=3.7 N=27 + X.MESH L=3.8 N=28 + X.MESH L=4.4 N=31 + + Y.MESH L=-.05 N=1 + Y.MESH L=0.0 N=5 + Y.MESH L=.05 N=9 + Y.MESH L=0.3 N=14 + Y.MESH L=2.0 N=19 + + REGION NUM=1 MATERIAL=1 Y.L=0.0 + MATERIAL NUM=1 SILICON + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG + + REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 + MATERIAL NUM=2 OXIDE + + ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 + ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 + ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 + ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 + + DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 + DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 + DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 + + MODELS CONCMOB FIELDMOB + METHOD AC=DIRECT ONEC .END
